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- 전자공학회논문지. JOUNNAL OF THE KOREA INSTITUTE OF TELEMATICS AND ELECTRONICS. A. A(1)
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전체 선택해제
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본문검색 결과만 보기
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Extraction of Ballistic Parameters in 65 nm MOSFETs
Kim. Jun-Soo, Lee. Jae-Hong, Kwon. Yong-Min, Park. Byung-Gook, Lee. Jong-Duk, Shin. Hyung-Cheol 대한전자공학회 Journal of semiconductor technology and science 6 Pages
대한전자공학회 Journal of semiconductor technology and science 2009, Vol.9 No.1 55-60 (6 pages)
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An Analytical Modeling of Threshold Voltage and Subthreshold Swing on Dual Material Surrounding Gate Nanoscale MOSFETs for High Speed Wireless Communication
Balamurugan. N.B., Sankaranarayanan. K., Amutha. P., John. M. Fathima 대한전자공학회 Journal of semiconductor technology and science 6 Pages
대한전자공학회 Journal of semiconductor technology and science 2008, Vol.8 No.3 221-226 (6 pages)
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Extraction of Effective Carrier Velocity and Observation of Velocity Overshoot in Sub-40 nm MOSFETs
Kim. Jun-Soo, Lee. Jae-Hong, Yun. Yeo-Nam, Park. Byung-Gook, Lee. Jong-Duk, Shin. Hyung-Cheol 대한전자공학회 Journal of semiconductor technology and science 6 Pages
대한전자공학회 Journal of semiconductor technology and science 2008, Vol.8 No.2 115-120 (6 pages)
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A New Scaling Theory for the Effective Conducting Path Effect of Dual Material Surrounding Gate Nanoscale MOSFETs
Balamurugan. N.B., Sankaranarayanan. K., Suguna. M. 대한전자공학회 Journal of semiconductor technology and science 6 Pages
대한전자공학회 Journal of semiconductor technology and science 2008, Vol.8 No.1 92-97 (6 pages)
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Threshold Voltage Modeling of Double-Gate MOSFETs by Considering Barrier Lowering
Choi. Byung-Kil, Park. Ki-Heung, Han. Kyoung-Rok, Kim. Young-Min, Lee. Jong-Ho 대한전자공학회 Journal of semiconductor technology and science 6 Pages
대한전자공학회 Journal of semiconductor technology and science 2007, Vol.7 No.2 76-81 (6 pages)
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Schottky Barrier MOSFETs with High Current Drivability for Nano-regime Applications
Jang. Moon-Gyu, Kim. Yark-Yeon, Jun. Myung-Sim, Choi. Chel-Jong, Kim. Tae-Youb, Park. Byoung-Chul, Lee. Seong-Jae 대한전자공학회 Journal of semiconductor technology and science 6 Pages
대한전자공학회 Journal of semiconductor technology and science 2006, Vol.6 No.1 10-15 (6 pages)
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Physics-based Algorithm Implementation for Characterization of Gate-dielectric Engineered MOSFETs including Quantization Effects
Mangla. Tina, Sehgal. Amit, Saxena. Manoj, Haldar. Subhasis, Gupta. Mridula, Gupta. R.S. 대한전자공학회 Journal of semiconductor technology and science 9 Pages
대한전자공학회 Journal of semiconductor technology and science 2005, Vol.5 No.3 159-167 (9 pages)