In order to improve the efficiency of Cu2-xS-CdS PN junction type solar cell, a method of reducing the series resiatance is considered. In the fabrication of the thin film of Cu2-xS, what has the largest value of conductivity is fabricated at 250 $^{circ}C$. The thin film of CdS which has beer fabricated at the temperature 250-30$0^{circ}C$ of the substrate and 800-85$0^{circ}C$ of evaporating material has the largest value of conductivity and also fairly good photoelectric characteristics. Therefore, the evaporated thin aim type CdS solar cell has been fabricated at the temperature 25$0^{circ}C$ of the substrate and 800-85$0^{circ}C$ of the evaporating material, and its efficiency is measured to he 6%.