Aluminum anodization method has been investigated for fabricating charge coupled device(CCD) with two-level aluminum gate structure. Al2O3 films were formed to a thickness of 400-500A, by anodizing aluminum with 30-35V of anode voltage for 2 hours using 2 % ammonium tartrate solution as an electrolyte. Breakdown voltage of these films were about 30 volts. Using above mentioned Al2O3 film as an insulator between two aluminum electrodes, CCD transversal low pass filter has been fabricated. CCD transversal low pass filter with 17 tap coefficients has shown 22 dB stop-band attenuation. The operating clock frequency range of the fabricated device was from 3 KHz to 100 KHz.