In this paper, the authors applied the method of hydrogen chloride gettering oxidation to fabricate the low noise bipolar transistor. The results of measurements of the effect of guttering on the variation of flicker noise spectral intensity for variable HCI concentrations indicate that flicker noise in bipolar than-sistor is dependent on the surface condition and that the gettering in a mixture of 2% HCI in oxidation produced the optimal results in the fabrication of the low noise device. In addition, it was also noted that the PSG layer formed by the emitter source (phosphorus) did not have so much guttering effect as in the process with HCl getterinng.