Titanium was deposited onto AISI-430 stainless steel by chemical vapor deposition from $TiI_4;and;H_2$ gas mixture. Effects of temperature, flow rate of the gas, and $TiI_4$ partial pressure on the deposition rate were thoroughly investigated. The deposition rate of Ti was found to be constant at the given temperature and was increased with increasing temperature. The rate is controlled by surface reaction at the flow rate of gas higher than 500 ml/min, whereas at the flow rate lower than that by diffusional process. It is also interesting to note that the reaction mechanism changes at 1050$^{circ}C$, at temperatures lower than 1050$^{circ}C$ the activation energy is 56.9 Kcal/mol, whilst at temperatures higher than that is 8.3 Kcal/mol.