In this paper, Analog/Digital BCDMOS technology that the bipolar devices for driver applications CMOS devices for logic applications, and DMOS devices for high voltage applications is pressented. An optimized poly-gate p-well CMOS process is chosen to fabricate the BCDMOS, and the basic concepts to desigh these devices are to improve the characteristics of bipolar, CMOS & DMOS with simple process technology. As the results, $h_{FE}$ value is 320 (Ib-$10{mu}A$ for bipolar npn transistor, and there is no short channel effects for CMOS devices which have Leff to $1.25{mu}m$ and $1.35{mu}m$ for n-channel and p-channel, respectively. Finally, breakdown voltage is obtained higher than 115V for DMOS device.