Preparation of $TiO_2$ Film by the Dip-coating Method and its Application to photo-electrochemical Electrodes. $TiO_2$ film of n-type semiconductor has been of great interest as a material for solar energy conversion. For its practical application, the dip-coating method has been applied to prepare $TiO_2$ (anatase) film on the nesa glass substrate. Films up to about $1.8{mu}m$ in thickness can be obtained by repeating the operation, dipping $ o$ pulling up $ o$ drying $ o$ heating at $500^{circ}C$ for 10 minute. Heating temperature at $500^{circ}C$ was adopted to convert $TiO_2$ gels into $TiO_2$ crystalline films. The $TiO_2$ films showed the maximum photocurrent ($14mA/cm^2$) at the film thickness of about $1.8{mu}m$. It was also found that the additional heating at $500^{circ}C$ for about 20 minutes improved remarkably the photo current of the $TiO_2$ films.