- Czochralski법에 의한 $Bi_{12}SiO_{20}$ 단결정 성장
- ㆍ 저자명
- 정광철,오근호
- ㆍ 간행물명
- 요업학회지
- ㆍ 권/호정보
- 1990년|27권 5호|pp.698-701 (4 pages)
- ㆍ 발행정보
- 한국세라믹학회
- ㆍ 파일정보
- 정기간행물| PDF텍스트
- ㆍ 주제분야
- 기타
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The necessary conditions for the growth of high quality Bi12SiO20 single crystals by the Czochralski method have been determined. The interface of melt and crystal was transformed convex to concave above 7 rpm. For growth <001> and <111> directions, facet morphology exhibited 4-fold and 6-fold symmetry. When the crystal of <001> growth direction was broadened, minor facet {110} was developed outstandingly.