Zirconium dioxide(ZrO2) thin films have been deposited by chemical vapor deposition technique involving the application of gas mixture of ZrCl4, and H2O into silicon wafers. The relationships between the deposition rate and various reaction parameters such as the deposition time, the gas flow rate, the deposition temperature, and the composition of reactant gases were studied. The film was identified as nearly stoichiometric monoclinic ZrO2. The apparent activation energy is about 19Kcal/mole at surface chemical reaction controlled region. The deposition rate is mainly influenced by the H2O-forming reacting between CO2 and H2.