The semiconducting BaTiO3 ceramics used in this study were sintered in the reducing atomosphere(hydrogen gas) and neutral atmosphere(nitrogen gas), then were heat-treated in air to vary defect concentrations. In this experiment, the correlations between the composition analysis and electrical characteristics of these samples were investigated. When the BaTiO3 ceramics were sintered in N2 atmosphere, it was observed that the Ba contents near the interface were lower than that of the grain center, and these samples showed superior PTCR effects. From analysis of the resistivities of grains and grain boundaries by CIRM(Complex Impedance Resonance Method), it was confirmed that the PTCR effects were caused by the resistivity of grain boundaries. And from measurement of the capacitance at each temperature, the samples sintered in N2 atmosphere show the increase of room temperature resistance and the decrease of capacitance as a result of the increase of the charge depletion layers. This phenomenon agrees well with the cation deficiencies in the analytical results.