Electrical properties of 0.15 mol% Y2O3 doped semiconducting BaTiO3 ceramics have been investigated as functions of Pb5Ge3O11 contents (from 0.25 mol% to 2.5 mol%) and sintering temperatures (from 1150$^{circ}C$ to 1300$^{circ}C$). The low-temperature sintered BaTiO3 ceramics above 1150$^{circ}C$ show increase of Curie temperature due to the diffusion of Pb+2 ions, and their PTCR effects decrease. As the sintering temperature increases the room temperature resistance decreases due to the growth of the grain, but the room temperature resistance increases with the increase of the Pb5Ge3O11 contents by the formation of thick insulating layers at the grain boundary.