Ti-Silicides를 single-Si wafer와 그 위에 oxide를 성장시킨 기판위에 composite target($TiSi_{2.6}$)을 sputtering함으로써 증착시켰다. 증착된 비정질 상태의 Ti-silicide는 급속 열처리(RTA)방법으로 $600^{circ}C$에서 $850^{circ}C$가지 20초간 처리하였다. RTA온도가 $800^{circ}C$가 되어서야 비로소 안정한 $TiSi_2$가 형성되었으며, 그 때의 비저항 값은 $27~29{mu}Omega-cm$로 Ti-metal reactive방법에 의한 $TiSi_2$보다 약간 높은 값으로 드러났다. X-ray로 상천이를 조사한 결과 역시 $750^{circ}C$가지 C49 $TiSi_2$가 형성되고, $800^{circ}C$가 되어서야 안정한 C54 $TiSi_2$로의 상천이가 일어남을 나타내고 있다. 또한 완전히 형성된 Ti-silicide의 조성비는 x-ray photoelectron spectroscopy(XPS)결과에서 Ti : Si이 1 : 2로 드러났으며, 그 동안 reactive 시켰을 때 $TiSi_2$의 단점으로 지적되어 왔던 형성 완료된 $TiSi_2$의 surface roughness는 $17{pm}1mm$이내로 매우 우수한 값으로 판명되어, device에 대한 응용 가능성을 높이고 있다.
Ti-silicide was deposited by sputtering the composite target($TiSi_{2.6}$) on single-Si wafers and oxide on them. The heat treatment temperatures by rapid thermal annealing(RTA) have been varied in the range of $600-850^{circ}C$ for 20seconds. It was not until RTA temperature was $800^{circ}C$ that a stable $TiSi_2$ was formed, and the value of resistivity of that phase was $27~29{mu}{Omega}-cm$, which seems a little higher than that formed by the reactive method. The result of x-ray diffraction peals showed that till $750^{circ}C$, C49 $TiSi_2$ phase was dominant, but at $800^{circ}C$, at last, the phase was transformed into a stable C54 $TiSi_2$ phase. And, the result of x-ray photoeletron spectroscopy(XPS) measurements showed that the composition ratio of Ti and Si was 2 1 in the case of specimens treated at $800^{circ}C$, The surface roughness of $TiSi_2$, which was condidered a weak point, was improved to a superior value of $17{pm}1nm$, therefore increasing the possibility of applying $TiSi_2$ to semiconductor devices.
