자기-저항 센서를 제작하기 위하여 Fe-Ni 합금과 Co-Ni 합금을 슬라이드 그라스와 Si wafer에 진공 증착하여 sensor element를 제작한 후 포화자속밀도($B_{s}$), 보자력($H_{c}$), 자기-저항 변화율 등을 조사하였다. 진공 증착된 Fe-Ni 합금 박막의 포화자속밀도는 0.65T이었으며 자화주파수 1 kHz에서 보자력은 0.379A/cm이었고 자냉처리 후 종방향 보자력은 0.370Acm(//), 횡방향 보자력은 0.390Acm(${ot}$)로 변화되었다. 자기-저항 변화율은 박막의 산화로 인하여 매우 불안정하였다. 진공 증착된 Co-Ni 박막의 포화자속밀도는 0.66T이었으며 자냉처리 후의 종방향 보자력은 5.895Acm(//)이었고 횡방향 보자력은 5.898A/cm(${ot}$)이었다. 한편 자기-저항 변화율(${Delta}R/R$)은 $3.6{sim}3.7%$로써 실온에서 매우 안정하였다. Fe-Ni 박막은 화학친화력이 강하여 자기-저항 센서 제조 공정에서 많은 문제점을 야기시키고 있으나, Co-Ni 박막은 화학친화력이 작고 자기-저항 효과가 뚜렷하여 고온용 자기-저항 소자 개발용 재료로 매우 적합할 것으로 사료된다.
In order to fabricate magnetoresistive sensor, Fe-Ni and Co-Ni alleys were evaporated on the slide glass and the silicon wafers. Saturation magnetic induction($B_{s}$), coercive field strength($H_{c}$) and magnetoresistance were measured for fabricated samples. The evaporated Fe-Ni thin films show that the saturation magnetic induction was 0.65 T, and coercive field strength was 0.379 A/cm, and this value was changed to 0.370 A/cm(//), 0.390 A/cm(${ot}$), respectively after magnetic annealing. For the measurement of coercive field strength, magnetizing frequency of 1 kHz was used. For the fabricated sensor element, the change of magnetoresistance (${Delta}R/R$) was excessively unstable due to oxidation in the process of fabrication. The evaporated Co-Ni alloy thin films show that saturation magnetic induction was 0.66 T, and coercive field strengthes were 5.895 A/cm(//), 5.898 A/cm(${ot}$), respectively, after magnetic annelaing. The change of magnetoresistance(${Delta}R/R$) was $3.6{sim}3.7%$ of which value was excessively stable to room temperature. Fe-Ni thin film could have many problems due to large affinity in the process of fabrication of magnetoresistance sensor, but Co-Ni thin film could be a suitable material for fabrication of magnetoresistance sensor, because of its small affinity and definite magnetoresistance effects.
