ZnS:Sm, F TFEL devices with double insulating layer are prepared by e-beam evaporation method. Electroluminescence and luminous efficiency of the device fabricated at various conditions are investigated. The main transitions on the emission spectra for ZnS:Sm, F TFEL device occur at$^4G_{5/2} o^6H_{9/2}^4G_{5/2} o^6H_{7/2}, ;^4G_{5/2} o^6H_{5/2} o$.Among them, the dominant spectral line and its corresponding transition occur at $^4G_{5/2} o^6H_{9/2}$(650 nm) and results in an orange-red emission color. The optimum concentration and substrate temperature for the ZnS:Sm, F TFEL device are around 1 wt% and $200^{circ}C$. Luminous efficiency for the device is the largest at optimum condition.