- Dichlorosilane Gas를 이용한 High Temperature Oxide Thin Film의 특성
- ㆍ 저자명
- 이승석,이석희,김종철,박헌섭,오계환
- ㆍ 간행물명
- 韓國眞空學會誌
- ㆍ 권/호정보
- 1992년|1권 1호|pp.190-197 (8 pages)
- ㆍ 발행정보
- 한국진공학회
- ㆍ 파일정보
- 정기간행물| PDF텍스트
- ㆍ 주제분야
- 기타
이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
In this study we have investigated physical and electrical properties of high temperature oxide (HTO) thin film using dichlorosilane (DCS) gas. This film had low etch rate and excellent step coverage, and its characteristics of Si-O bond were similar to those of thermal oxide. I-V curves also showed similar electrical properties to those of thermally grown oxide (SiO2) while time dependent dielectric breakdown (TDDB) results revealed 1/4 value of thermal oxide. However, defect density was measured to be much lower value than that of thermal oxide.