When CVD-W films deposited on the reactively sputter-deposited TiN(${circled1}$), the $NH_3$-RTP (rapid themal processed) TiN(${circled2}$), and the furnace-annealed TiN submitate (${circled3}$) by $SiH_4$, reduction, deposition rate is in the order of ${circled1}>{circled2}>{circled3}$ and incubation period of W nucleation is in the order of ${circled1}{leq}{circled2}<{circled3}$. The longest incubation period of nucleation and lowest deposition rate for the CVD-W on the annealed TiN is due to the incorporation of oxygen from the nitrogen ambient containing some oxygen as contaminant into the TiN film. The higher W deposition rate and the lower incubation period of W nucleation on the RTP-TiN substrate in comparison with those on the sputtered TiN substrate seem to be due to a negative effect of the high compressive stress of the RTP-TiN on the nucleation and growth of W. Also the thickness uniformity of the W film deposited on the TiN substrate by $SiH_4$ reduction turns out to be better than that by $H_2$ reduction.