Silicon ion implantation was performed to LPCVD amorphous Si films and the low temperature annealing process followed with various conditions to find the optimal physical properties by studying recrystallization behavior. The uniformity of the recrystallized films was inspected by optical microscopy and for this purpose, new KOH: (IPA) : $H_2$O: $K_2$C${r_2}{O_7}$, etchant was developed. XRD and TEM results showed that the crystallites were grown as a form of dendrite with (111) preferred orientation, and the grain size was increased with dose concentration. The maximum grain size was obtained when the 3${ imes}{10^{15}}$c$m^2$ implanted amorphous Si film was recrystallized at 55 $0^{circ}C$for more than 40 hrs and at this condition the grain size was 3.2${mu}$m.