Monolithic NOR and INVERTER active optical logic devices inte- grated with surface-emitting microlasers, heterojunction photo- transistors(HPT) in parallel and resistors in series are characterized. The differential quantum efficiency of the typical AlGaAs superlattice microlaser integrated in the active optical logic devices is 15%. Current gain of the HPT is 57, when emitter-collector voltage and input optical power are 4 V and $50{mu}W$, respectively. $57{mu}W$ of output power from the active optical logic device decreases to zero when $47{mu}W$ of input optical power is incident on the HPT part of the active logic device.