TiN/Ti is the best buffer layer between PZT thin film and si substrate among the Ti, TiN, ZrN, TiN/Ti, ZrN/Ti. The amorphous PZT films deposited on TiN/Ti buffer layer directly transform into perovskite phase when rapid thermal annealed for 30sec above 55$0^{circ}C$. As Rapid Thermal Annealing(RTA) temperature increased, the remanent polarization(Pr) and dielectric constant($varepsilon$r) increased and then showed Pr=21 $varepsilon$r=593 when rapid thermal annealed 80$0^{circ}C$ for 30sec. On the contrary the leakage current increased with increasing RTA temperature due to the formation of void made by Pb evaporationand grain cohesion.