Si 기판 표면상태 변화와 관련된 핵생성 자유에너지 증가에 따른 다이아몬드 박막성장 거동을 관찰하였다. 표면 염마조건 변화에 따른 3가지 기판(A-Si, B-Si, C-Si)위에 동일한 성장조건으로 다이아몬드를 성장하였으며, 이때 형상인자와 관련된 자유에너지 관계는 ${Delta}G_{A-Si}<{Delta}G_{B-Si}<{Delta}G_{C-Si}$이다. AES, SEM, XRD, RHEED에 의해 각각의 박막 A, B, C를 조사한 결과, 핵생성 자유에너지가 가장 적은 A 박막은 (100) (110) 면이 지배적인 고품위 다이아몬드 박막이다. 자유에너지가 A에 비해 다소 적은 B 박막은 (111) 면이 지배적인 8면체 다이아몬드 박막이고, 자유에너지가 자장 적은 C 박막은 흑연이 많이 함유된 구상의 다이아몬드이다.
The effect of nucleation free energy related to Si surface states on diamond film growth behavior has been studied. Ar first, the three kinds of diamond thin films (A, B, C) were deposited on various Si substrates (A-Si, B-Si, C-Si) whose surfaces were polished with 1 ${mu}m$ diamond paste, 6 ${mu}m$ Al_2O_3$ powder and 12 ${mu}m$ Al_2O_3$ powder respectively. And then, relative nucleation free energy calculated is ${Delta}G_{A-Si}<{Delta}G_{B-Si}<{Delta}G_{C-Si}$. Although there are some difference in grain size, shape and nucleated size, the thin films on A-Si and B-Si were diamond including a small amount of DLC which was confirmed by AES, SEM, XRD, and RHEED. Namely, the diamonds of films (B) were not nucleated in scratches but in dents and larger in grain size compare with the film (C) of which diamond sere nucleated not only scratches but also dents. And, the sphere diamond which is not general shape was grown on C-Si. After all, the sphere was turned out to be the diamond including much graphite as a result of the AES in situ depth profiling. Consequently, the diamond shape and quality grown on Si were Changed from the crystal which the (100) and (110) planes were predominent to the crystal in which (111) plane was predominent, and newt to sphere shape diamond including much graphite according as the nucleation free energy increases.
