A 3-terminal pin-type photosensor with gate contrail is fabricated using standard silicon CMOS IC process. The photosensor of a $100{mu}m{ imes}120{mu}m$ size has dark current less than 1nA and its breakdown voltage is -14V with a depletion capacitance 0.75 pF at -5V reverse bias. Responsivity at 0V gate voltage is 0.25A/W at $0.633{mu}m$ wavelength, 0.19A/W at $0.805{mu}m$. Responsivity increases with increasing gate voltage. The integrated circuit of photosensor and CMOS inverter shows $22K{Omega}$ transimpedance and photocurrent of $90{mu}A$ switchs the output state of digital inverter without additional amplifier.