ZT/PZT/ZT multi-layered thin films were deposited on silicon substrate by co-sputtering method for FEMFET device application. Effects of Pb/(Zr+Ti) ratio, films thickness, annealing conditions and substrate temperature on the ferroelectric behavior of the multi-layered films were studied. The best memory device characteristics with leakage current of 2$ imes$10-8 A/$ extrm{cm}^2$ and breakdown field of about 1 MV/cm could be obtained with ZT(250 $AA$) / PZT(1000 $AA$)/ZT(750 $AA$) multi-layered thin film deposited at 35$0^{circ}C$ and post-annealed at $700^{circ}C$ for 120 sec by RTA(Rapid Thermal Annealing).