Epitaxial $CoSi_2$ layer has been grown on NaCl(100) substrate at low deposition temperature($200^{circ}C$) by multitarget bias cosputter deposition(MBCD). The phase sequence and crystallinity of deposited silicide as a function of deposition temperature and substrate bias voltage were studied by X-ray diffraction(XRD) and transmission electron microscopy(TEM) analysis. Crystalline Si was grown at $200^{circ}C$ by metal induced crystallization(M1C) and self bias effect. In addition to, the MIC was analyzed both theoretically and experimentally. The observed phase sequence was $Co_2Si o CoSi o Cosi_2$ and was in good agreement with that predicted by effective heat of formation rule. The phase sequence, the CoSi(l11) preferred orientation, and the crystallinity had stronger dependence on the substrate bias voltage than the deposition temperature due to the collisional cascade mixing, the in-situ cleaning, and the increase in the number of nucleation sites by ion bombardment of growing surface. Grain growth induced by ion bombardment was observed with increasing substrate bias voltage at $200^{circ}C$ and was interpreted with ion bombardment dissociation model. The parameters of $E_{Ar};and alpha(V_s)$ were chosen to properly quantify the ion bombardment effect on the variation in crystallinty at $200^{circ}C$ with increasing substrate bias voltage using Langmuir probe.