Epitaxial TiSiz films have been grown by UHV deposition of Ti on atomically clean Si(ll1)- orientated substrates. The Ti film of 50$AA$ was deposited on the reconstructed Si(ll1) surface at room temperature. The sample was annealed up to $800^{circ}C$ in $100^{circ}C$ increments. The structure of the TiSiL films have been identified as the C49 metastable phase by electron diffraction patterns. Scanning electron microscopy( SEM) shows three different types of Tiksilicide island morphologies. The individual island structures are single crystal and are considered to be epitaxy with different crystallographic orientations. The orientational relationships of the $TiSi_{2}$ islands is given by [ 172 1 C49 $TiSi_{2}$//[110] Si and (021) C49 $TiSi_{2}$// (111)Si.