InGaAsP/InP PBH-DFB-LD emitting at 1.55${mu}$m wavelength has been fabricated for 2.5Gbps optical fiber communcations. For fabrication of PBH-DFB-LD, Interference expose for grating formation 3-step LPE epitaxial growth were used. Fabricated PBH-DFB-LD operates in single longitudinal mode with larger than 35dB SMSR and wider than 3dB bandwidth of 3GHz. A 8${mu}$m mesa structure was introduced by channel etching to reuce parasitic capacitance. To reduce pad capacitance, we designed a small electrode. 0.27mW/mA in the case of spectrum shows single logitudinal mode operation with larger thatn 30dB SMSR measured at 5mW.