Al films deposited on sputtered-TiN substrate by metal organic chemical vapor deposition (MOCVD) from DMEAA were characterized using X-ray diffraction (XRD), Auger electron spectroscopy(AES), transmission electron microscopy(TEM), and atomic force microscopy(AFM). Deposition rate showed increase-maximum-decrease pattern in the temperature ragne of 100~25$0^{circ}C$ with maximum deposition rate around 15$0^{circ}C$. The film deposited at low temperatures showed equiaxed grains, and at high temperatures elongated block-like grains along with alumnum oxide particle inclusions were observed. There exist many dislocations at the Al/TiN interface. Aluminum oxide phase was formed at the Al/TiN interace during the early stage of Al deposition.