Double heterosturcutres based on $Al_xGa_{1-x}As$, in which the p active layer(0<x<0, 5) is dped with germanium, have been studied. Nonradiative hole traps of two types($E_V+0, 26eV$ and $E_V+0.34; eV$) had detected in the active layer by DLTS. There is a proportionality between the concentration of the traps observed and the concentration of shallow accepters (germanium). The elcetroluminescence spectrum reveals a nonfundamental emission band (hv=0, 80-0, 85 eV at T=77K), due to deep donor-shallow accept($Ga_{As}$) radiative transitions.