콘택 홀 패턴의 미세화가 HF 용액의 침투에 미치는 영향을 파악하고자, 미세 채널 패턴에서의 산화막 습식 식각 특성을 조사하였다. LPCVD로 증착된 산화막을 두께 0.1~1$mu extrm{m}$, 선폭 0.1~20$mu extrm{m}$, 그리고 초기 깊이 ~1.2$mu extrm{m}$ 범위의 질화막으로 둘러 쌓인 미세 채널 패터으로 제작한 후, HF용액에 의한 산화막의 식각속도를 관찰하였다. 실험 결과로써, 크기가 $0.1 imes 0.1 mu extrm{m}^{2} 초기 깊이가 1.2$mu extrm{m}$인 고종횡비(~12)의 초미세 패턴에서도 식각 속도가 일정함을 볼 수 있어서, 콘택 홀 패턴의 미세화에 관계없이 반응액의 침투가 원활하게 이루어짐을 알 수 있었다.
In order to study on the penetrations of HF solution acording to the geometrical shrinkage of contact-hole pattern size, the wet etch characteristics for oxide in microchannel patterns was investigated. Microchannel patterns of LPCVD oxide surrounded by nitride film, with dimensions of 0.1~1$mu extrm{m}$ height and 0.1~20$mu extrm{m}$, width, were fabricated. And the etch rates of oxide in HF solution were observed. It was found that oxide etch rate for micro-channel patterns in HF was not affected by pattern sizes and initial aspect ratios up to $0.1 imes 0.1 mu extrm{m}^{2} size and 1.2$mu extrm{m}$ depth. Finally, it was concluded that there were no special limitations for penetrations of HF solution in wet processes according to the geometrical shrinkage of contact-hole pattern size.
