In this study, a vertical type LPE system has been developed for III-V semiconductor compounds single crystal growth. On the basis of the experience & basic study using this system, the system modification has been carried out for a ultra thin multi-layer single crystal. The temperature fluctuation was within ${pm}0.006^{circ}C$ at $800^{circ}C$, temperature uniformity for graphite boat around was within ${pm}0.15^{circ}C$ at $650^{circ}C$, and cooling rate was controllable from $2.2^{circ}C$/min to $0.05^{circ}C$/min. As a result it is considered to satisfy the condition to grow a ultra thin layer single crystal of III-V semiconductor compounds.