The interfacial electrical properties of InSb MIS structure with low temperature remote PECVD $SiO_{2}$ have been characterized. The interlace-state density at mid-bandgap of the MIS structure was about $1{sim}2{ imes}10^{11};cm^{-2}eV^{-1}$, when the $SiO_{2}$ film was deposited at $105^{circ}C$. However, large amount of interlace states and trap states were observed in the MIS structure fabricated at temperatures above $105^{circ}C$. The time constant of $10^{-4}{sim}10^{-5};sec$ of interface states was extracted from G- V measurement. As the deposition temperature increased, the hysteresis of C- V curves were increased due to the high trap density.