The purpose of this paper is to develop a simulation program to predict resist prifile in electron-beam lithography, where the main issue is proximity effect. The simualtion program composes of monte-carlo simulation, exposure simulation and development simulation. In nonte-carlo simulation, the absorbed energy in the resist is calculated when one electron is incident into resist, using hybrid model on the basis of the rutherford differential scattering cross section and moller theory. In exposure simulation, the absorbed energy in the resist is calculated when electrons are incident in exposure pattern. In the program, the developed profile depending on time is obtained by string model. The 0.2$mu$m and the 0.3$mu$m line and space patterns are experimentally delineated and compared to the simulation results to check the relevance of the program.