In the conventional GaAs MESFET circuit simulation, the DC and transient simulation results are often failed due to the discontrinuities of the first and second order derivatives arising from the use of separate C-V models in linear, satruration, and transition regions. In this paper, we propose a unified capacitance model for linear, transition, and saturation regions by using a unified channel length modulation effect that is derived by extending the channel length modulation effect in the saturation region to the linear region. Calculated resutls from the proposed capacitance model agree well with 2-D device simulation resutls. Thus, the proposed model is expected to be useful in circuit simulation.