- AlCu 플라즈마 식각후 Al 결정입계에서 Al 부식현상
- ㆍ 저자명
- 김창일,권광호,윤선진,김상기,백규하,남기수
- ㆍ 간행물명
- 電子工學會論文誌. Jounnal of the Korea institute of telematics and electronics. A. A
- ㆍ 권/호정보
- 1996년|12호|pp.47-52 (6 pages)
- ㆍ 발행정보
- 대한전자공학회
- ㆍ 파일정보
- 정기간행물| PDF텍스트
- ㆍ 주제분야
- 기타
Cl-based gas chemistry is generally used to etching for al alloy metallization. After the etching of Al alloy with Cl-based gas plasma, residual chlorine on Al alloy reacts with H$_{2}$O due to air exposure and results in Al corrosion. In this study, the corrosion phenomena of Al wer examined with XPS(X-ray photoelectron spectroscopy) and SEM (scanning electorn microscopy). It was confirmed that chlorine mainly existed at the grian boundary of Al alloy after plasma etching of Al alloy with cl-based gas chemistry and Al corrosion was largely generated at the grain boundary of Al alloy. And residual chlorine was passivated by sulfur and fluorine which were generated by SF$_{6}$ plasma. These effects of passivation reduced the Al corrosion due to air exposure.