GaAs ∑19, {331}/{331} [110]과 ∑3 {111}/{111} [110] 기울임입계의 구조적 특징을 고분해투과전자현미경을 이용하여 분석하였다. 이 입계들은 격자일치점의 면밀도가 높은 결정면을 평행하게 놓여 있으며, 특정한 원자배열단위를 나타낸다. 입계에서 관측된 이차입계전위들의 코어 직경의 약 2nm정도이며 이들이 놓인 입계부분에서 입계계단이 생성된다. 이들 입계계단과 이차입계전위의 상관관계를 DSC격자를 이용하여 고찰하였다.
The atomic configurations of GaAs ∑19, {331}/{331} [110] and ∑3 {111}/{111} [110] tilt grain boundaries were investigated by HRTEM (High-resolution Transmission Electron Microscopy). The boundary planes lie parallel to the crystallographic planes with high number density of coincident lattice sites for given misorientations, exhibiting particular atomic structural units. Secondary boundary dislocations with a core diameter of about 2nm were observed at boundary steps when a slight deviation from exact ∑-related misorientations occurs in the bicrystal system. The relation between the secondary boundary dislocation and the boundary step was discussed based on a DSC lattice model.
