RWG MQW-LD has been made with our vertical LPE system from the optimal design condition for the RWG MQW-LD to be activated as weakly index-guided LD. Through several experiments we have established the growth condition which can be used through to grow the MQW-DH wafer and to control the thickness of MQW layer to ~200$AA$. 4 ${mu}{ extrm}{m}$-thickness of the ridge pattern has been formed through the photolithographic process on the MQW-DH wafer grown by the former condition, and then we have fabricated the RWG MQW-LD using it. From the result of measuring the electro-optical characteristics we can make sure that it can be lasing as lasing as laterally single mode at even more than $2.7I_{th}$.