In this paper, we report an InGaAs/InAlAs multi-quantum well (MQW) avalanche photodiode (APD) showing a performance suitable for 10 Gbps lightwave communications. In designing the device, emphasis is given on the effect of indiffusion of Be dopant from the highly doped field layer into the MQW multiplication region. It is found that a small amount of diffusion can alter the dark current and gain characteristics of the device significantly. A spacer used to restrain such indiffusion is shown effective in reducing dark current (500 nA at a gain of 10) while maintaining a high bandwidth (10 GHz at a gain of 10) devices grown by molecular beam epitaxy.