;In the binary system of $alpha$-SiC and graphite the effect of the control of the surface charge and the dispersants on the stable slip was investigated. Also after fabricating green body by slip casting method under this condition infiltration process was conducted to fabricate reaction bonded silicon carbide whose microstructure and mecha-nical properties was then characterized, For stable slip zeta-potential and viscosity of the slip as a function of pH was measured and then the microstructure of the green body was characterized. As well as it was also determined as a function of the amount of the various dispersants used. For reaction bonding process the sintered body was fabricated by infiltration of molten Si at 155$0^{circ}C$ under 10-3 Torr for 30 min. For stable dispersion it was effective when using both pH and dispersant it was possible to obtaine uniform and homoge-neous microstructure. The 3-P bending strength was in the reange of 420$pm$40 MPa and the density was 2.9 g/cm3