The double sided buried contact(DSBC)silicon solar cell processing requires doping of the rear and front grooves with boron and phosphorus respectively. The successful electroless plating of these grooves with the appropriate metals haave been found to depend on the boron conditions for the rear fingers. However, an increased understanding of electroless plating has removed this restriction. Thus the DSBC cells using different boron conditions can be electrolessly plated with ease. This paper presents the recent work done on metallizing the double sided buried contact silicon solar cells with heavily doped boron grooves. The cells results indicate that, the heavier the boron grooves, the poorer the cell performance because of the probable higher metal contact recombination associated with boron grooves.