Sol-Gel법에 의해 흑연소지의 표면에 SiC막을 형성해 줌으로써 내산화성을 향상시키고자 하였다. 규소(Si) 및 탄소(C)의 근원물질로는 TEOS(Tetraethyl orthosilicate)와 phenol수지를 각각 사용하였으며, TEOS sol의 농도가 SiC막의 형성에 미치는 영향을 알아 보기 위해, $H_2O$/TEOS의 몰비를 2, 4, 6, 8 및 10으로 변화시켜 흑연소지에 SiC가 피복된 상태를 X-ray diffractometer와 SEM(scanning electron microscope)을 이용하여 분석한 결과, 약 5 ${mu}m$, 12 ${mu}m$, 7 ${mu}m$, 7 ${mu}m$ 및 2 ${mu}m$의 SiC코팅층이 각각 형성되었음을 알 수 있다. 또, 내산화성을 알아보기 위해 $1600^{circ}C$에서 코팅된 흑연소지를 다시 공기중에서 $1000^{circ}C$의 온도하에서 1 시간 동안 열처리 해 준 후의 무게소실율을 조사한 결과, 각각 26.17%, 20.97%, 17.28%, 21.73% 및 28.13%로 나타났다.
To increase the oxidation-resistance of graphite substrate, we have tried to form SiC film on its surface by Sol-Gel method. TEOS(Tetraethyl orthosilicate) and phenol resin have been used as silicon(Si) and carbon(C) sources, respectively. In order to know the effect of the TEOS Sol concentration on the forming of SiC film, we have taken 5 different $H_2O$/TEOS mol ratios of 2, 4, 6, 8 and 10. And the coating states of SiC on the graphite substrate have been analyzed with X-ray diffractometer and scanning electron microscope (SEM), and we have obtained about 5${mu}m$, 12${mu}m$, 7${mu}m$, 7${mu}m$ and 2 ${mu}m$ as the thickness of SiC coating layers, respectively. For also knowing the oxidation resistance the SiC coated graphites at $1600^{circ}C$ were heated again at $1000^{circ}C$ under air atmosphere for 1 hr, and as a result we have received the weight losses of 26.17%, 20.97%, 17.28%, 21.73% and 28.13%, respectively.
