The layered BaTiO3 thin films with a high dielectric constant of polycrystalline BaTiO3 and a good in-sulating property of amorphous BaTiO3 were prepared. And their electrical properties were characterized with stacking methods. The BaTiO3 thin films were prepared by rf-magnetron sputtering technique using a ceramic target on Indium-doped Tin oxide coated glasses. A new stacking method resulted in higher dielec-tric constant, capacitance per unit area, and breakdown strength than those prepared by a conventional stacking method; the new method continuously decrease the substrate temperature after initial deposition of a polycrystalline BaTiO3 layer. The observed high dielectric constant could be explained only by a mul-tilayered amorphous/microcrystalline/polycrystalline structure, which was confirmed indirectly by AES depth profile.