The yttria doped ceria (YDC) thin films were fabricated by electrochemical vapor deposition on the porous $alpha$-Al2O3 substrate. The growth rates of the films obeyed a parabolic rate law, which constant was 259.0 $m^2$/hr at 120$0^{circ}C$. As deposition temperature (above 110$0^{circ}C$) increased, dense thin films were enhanced. Mole fraction of XYC13 had an effect upon surface morphologies. Electrical conductivity was increased with deposition temperature. The conductivity of YDC film prepared at XYC13=7.9$ imes$10-2 was about 0.097 S/cm at 104$0^{circ}C$ and the activation energy of conduction was calculated to be 26.6 kcal/mol.