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$Zn_4$$ GeSe_6$및 $Co^{2+}$를 첨가한 $Zn_4$$ GeSe_6$:$Co^{2+}$단결정의 광학적 특성
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  • $Zn_4$$ GeSe_6$및 $Co^{2+}$를 첨가한 $Zn_4$$ GeSe_6$:$Co^{2+}$단결정의 광학적 특성
  • Optical properties of undoped and $Co^{2+}$-doped $Zn_4$$ GeSe_6$ single crystals
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電氣電子材料學會誌= The journal of the Korean Institute of Electrical and Electronic Material Engineers
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1997년|10권 2호|pp.105-112 (8 pages)
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한국전기전자재료학회
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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Undoped and Co$^{2+}$-doped Zn$_{4}$GeSe$_{6}$ single crystals were grown by the Chemical Transport Reaction method using iodine as a transporting agent. The crystal structure of these compounds determined by X-ray diffraction analysis was monoclinic structure. The direct energy gaps of these compounds were measured and the temperature dependence of the optical energy gap were closely investigated over the temperature range 10-290K. The temperature dependence of the optical energy gap is well presented by the Varshni equation. Also the optical absorption peaks of Zn$_{4}$GeSe$_{6}$ :Co$^{2+}$ single crystal observed, centered at 5437, 6079, 7142, 12950, 13462, 14786 and 15735 $cm^{-1}$ /, can be explained in terms of the electronic transitions of Co$^{2+}$ ions located at Td symmetry of the host materials. According to the crystal-field theory, the crystal-field, Racah and spin-orbit coupling parameters obtained from the absorption bands are given by Dq = 361$cm^{-1}$ /, B = 655$cm^{-1}$ / and .lambda. = 284$cm^{-1}$ / respectively.ively.