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Sol-Gel 법에 의한$ PbZrO_3$-$PbTiO_3$-$Pb(Ni_{1/3}Nb_{2/3})O_3$
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  • Sol-Gel 법에 의한$ PbZrO_3$-$PbTiO_3$-$Pb(Ni_{1/3}Nb_{2/3})O_3$
  • Electrical properties of sol-gel derived $ PbZrO_3$-$PbTiO_3$-$Pb(Ni_{1/3}Nb_{2/3})O_3$ thin film
저자명
임무열,구경완,한상옥
간행물명
電氣電子材料學會誌= The journal of the Korean Institute of Electrical and Electronic Material Engineers
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1997년|10권 2호|pp.134-140 (7 pages)
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한국전기전자재료학회
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb $_{2}$3/O$_{3}$)(PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol rates of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20) and #4(40:40:20), respectively. The spin-coated PZT-PNN films were sintered at the temperature from 500.deg. C to 600.deg. C for crystallization. The P-E hysteresis curve was drawn by Sawyer-Tower circuit with PZT-PNN film. The coercive field and the remanent polarization of #4(40:40:20 mol%) PZT-PNN film were 28.8 kV/cm and 18.3 .mu.C/cm$^{2}$, respectively. Their dielectric constants were shown between 128 and 1120, and became maximum value in MPB(40:40:20 mol%). The leakage currents of PZT-PNN films were about 9.4x 10$^{-8}$ A/cm$^{2}$, and the breakdown voltages were about 0.14 and 1.1 MV/cm. The Curie point of #3(45:35:20 mol%, sintered at 600.deg. C) film was 330.deg. C.