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t-ws 고장 검출을 위한 테스트 방법의 개선
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  • t-ws 고장 검출을 위한 테스트 방법의 개선
  • Improvement of Test Method for t-ws Falult Detect
저자명
김철운,김영민,김태성
간행물명
電氣電子材料學會誌= The journal of the Korean Institute of Electrical and Electronic Material Engineers
권/호정보
1997년|10권 4호|pp.349-354 (6 pages)
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한국전기전자재료학회
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기타
이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

This paper aims at studying the improvement of test method for t-weight sensitive fault (t-wsf) detect. The development of RAM fabrication technology results in not only the increase at device density on chips but also the decrease in line widths in VLSI. But, the chip size that was large and complex is shortened and simplified while the cost of chips remains at the present level, in many cases, even lowering. First of all, The testing patterns for RAM fault detect, which is apt to be complicated , need to be simplified. This new testing method made use of Local Lower Bound (L.L.B) which has the memory with the beginning pattern of 0(l) and the finishing pattern of 0(1). The proposed testing patterns can detect all of RAM faults which contain stuck-at faults, coupling faults. The number of operation is 6N at 1-weight sensitive fault, 9,5N at 2-weight sensitive fault, 7N at 3-weight sensitive fault, and 3N at 4-weight sensitive fault. This test techniques can reduce the number of test pattern in memory cells, saving much more time in test, This testing patterns can detect all static weight sensitive faults and pattern sensitive faults in RAM.