We manufactured CoNbZr/Cu/CoNbZr multi-layer films by rf magnetron sputtering methods and formed the patterns on the deposited multi-layer films. In this study, we fabricated a new etchant for forming the patterns by the wet etching with etchant and we searched for the best etching conditions and the etchant composition. Cu was etched selectively independent on the concentration of iron chloride solution, but amorphous CoNbZr thin film did not. The etchant was achieved by iron chloride solution(17.5 mol%) mixed with HF (20 mol%) during 150 sec, which etched CoNbZr/Cu/CoNbZr multi-layer films at the same time. Also, the etchant etched CoNbZr/Cu/CoNbZr multi-layer films by the three-step. It was shown that the cross-section had the isotropic structure and excellent etching characteristics with the above etchant.