Transparent conducting indium tin oxide (TC-ITO) thin films are deposited on soda lime glass by a dc magnetron sputtering technique having the unbalanced-magnet structure in order to improve the electrical/material characteristics and to avoid the surface damages. The material properties are measured by the x-ray diffractometer (XRD) and atomic force microscope (AFM). The (400) peak as the preferred orientation of <100> direction for ITO thin films is stabilized with the increase of substrate temperature. The surface roughness estimated by AFM 3D image at the substrate temperature of 40$0^{circ}C$ is extremely uniform. The best resistivity of ITO films (5500 $AA$ thick) at 40$0^{circ}C$ is about 1.3$ imes$10$^{-4}$ $Omega$cm on the position of 4 cm from substrate center.