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전자빔 증착법으로 제작된 ZnS:Mn 박막의 구조 및 광학적 특성
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  • 전자빔 증착법으로 제작된 ZnS:Mn 박막의 구조 및 광학적 특성
  • Structural and Optical Characteristics of ZnS:Mn Thin Film Prepared by EBE Method
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정해덕,박계춘,이기식
간행물명
電氣電子材料學會誌= The journal of the Korean Institute of Electrical and Electronic Material Engineers
권/호정보
1997년|10권 10호|pp.1005-1010 (6 pages)
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한국전기전자재료학회
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

ZnS:Mn thin film was made by coevaporation with Electron Beam Evaparation(EBE) method. And structural and optical characteristics of ZnS:Mn thin films were investigated by substrate temperature annealing temperature and dopant Mn. When ZnS:Mn thin film was well deposited with cubic crystalline at substrate temperature of 30$0^{circ}C$ its surface index was [111] and its lattice constant of a was 5.41$AA$. Also When ZnA:Mn thin film was well made with hexagonal crystalline at substrate temperature of 30$0^{circ}C$annealing temperature of 50$0^{circ}C$and annealing time of 60min its miller indices were (0002) (1011), (1012) and (1120). And its lattice constant of a and c was 3.88$AA$and 12.41$AA$ respectively. Finally hexagonal ZnS:Mn thin film with dopant Mn of 0.5wt% had fundamental absorption wavelength of 342nm. And so its energy bandgap was about 3.62eV.