To form 0.2 .mu.m p$^{+}$-n junctions, BF$_{2}$ ions with the energy of 20keV and the dose of 2*10$^{15}$ cm$^{-2}$ were implanted into the crystalline and preamorphized silicon substrates. Th epreamorphization was performed using 45keV, 3*10$^{14}$ cm$^{-2}$ As or Ge ions. Th efurnace annealing and rapid thermal annealing were empolyed to annihilate the implanted damage and to activate the implanted boron ions.The junction properties were analyzed with the measured values of the junction depth, sheet resistances, residual defects, and leakage currents. The thermal cycle of furnace annela followed by rapid thermal annela shows better characteristics than the annealing sequence of rapid thermal anneal and furnace annela.Among the premorphization species, Ge ion exhibited the better characteristics than the As ion.n.