HWE 방법에 의해 Cd1-xZnxS 박막을 (100)방향을 Si 기판 위에 성장시켰다. 증발원과 기판의 온도를 각각 600℃, 440℃로 하여 성장시킨 Cd1-xZnxS 박막의 이중 결정 X-선 요동곡선(DCRC)의 반폭치(FWHM)값이 265 arcsec로 가장 작았다. Van der Pauw 방법으로 Hall효과를 측정하여 운반자 농도와 Hall 이동도의 온도 의존성을 조사하였다. 광전도 셀의 특성으로 spectral response, 최대 허용소비전력(MAPD), 광전류와 암전류(pc/dc)의 비 및 응답시간을 측정하였다. Cd0.53Zn0.47S광전도 셀을 Cu증기 분위기에서 열처리한 경우 감도(γ)는 0.99, pc/dc은 1.65 ×10 7 그리고 최대 허용소비전력(MAPD)은 338mW, 오름시간 (rise time)은 9.7ms, 내림시간(decay time)은 9.3ms로 가장 좋은 광전도 특성을 얻었다.
The Cd1-xZnxS thin films were grown on the Si(100) wafers by a hot wall epitaxy method (HWE). the source and substrate temperature are 600℃ and 440℃, respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction (DCXD). Hall effect on the sample was measured by the van der Pauw method and the carrier density and mobility dependence of Hall characteristics on temperature was also studied. In order to explore the applicability as a photoconductive cell, we measured the sensitivity (γ), the ratio of photocurrent to darkcurrent (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time. The results indicated that the best photoconductive characteristic were observed in the Cd0.53Zn0.47S samples annealed in Cu vapor comparing with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of 1.65 × 107, the MAPD of 338mW, and the rise and decay time of 9.7 ms and 9.3 ms, respectively.
