The relationship of growth-in defects such as crystal originated particles (COP), flow pattern defects(FPD), laser scattering tomography defects (LSTD) was investigated in Cz-Si single crystals which had different pulling speed during crystal growing. It is concluded that the density and radial distribution of grown-in defects is strongly dependent on the pulling speed. And as the generation areas of these grown-in defects in a wafer are identical in radial position, they can be generated from same origin during crystal growing.